Development of a
Commercially Viable 4H-SiC PiN Diode
Technology
Mrinal K. Das, Cree, Inc.,
USAABSTRACT: The path to
commercialization of the 4H-SiC PiN diode
technology has been hampered by a
fundamental problem with the forward
voltage stability resulting from stacking
fault growth emanating from basal plane
screw dislocations (BPD). In this
contribution, we highlight the progress
toward producing stable high power
devices with sufficient yield to promote
commercial interest. Two independent
processes, LBPD1 and LBPD2, have been
shown to be effective in reducing the BPD
density and enhancing the forward voltage
stability while being compatible with
conventional power device fabrication.
Applying the LBPD1 and LBPD2 processes to
10 kV (20 A and 50 A) 4H-SiC PiN diode
technology has resulted in a dramatic
improvement in the total device yield
(forward, reverse, and forward drift
yields) from 0% to >20%. The LBPD1
process appears to be more robust in
terms of long term forward voltage
stability.
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